Study of Etching Damages Induced by Reactive-Ion-Etching and Electron Cyclotron Resonance Etching on the Silicon Substrates

博士 === 國立交通大學 === 電子研究所 === 83 === In this thesis, we study the properties of thin oxides thermally grown on reactive-ion-etched (RIE) silicon substrates in N2O and diluted O2 ambient. The interface microroughness is strongly dependent on the RIE conditio...

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Bibliographic Details
Main Authors: Shih-Yuan Ueng, 翁士元
Other Authors: Huang-Chung Cheng
Format: Others
Language:en_US
Published: 1995
Online Access:http://ndltd.ncl.edu.tw/handle/54938753342994590641