Photoluminescence Spectrum of LT-GaAs and Raman study of AlAsSb
碩士 === 國立交通大學 === 電子物理學系 === 83 === We use Photoluminescence(PL) spectrum to investigate the low temperature gallium arsenide films (LT-GaAs), grown by the metalorganic chemical vapor deposition(MOCVD)method, using TEGa and TBAs as source p...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83360719206450754571 |