| Summary: | 碩士 === 國立交通大學 === 光電(科學)研究所 === 83 === We are using the standard MOS process and anisotropic
etching technology to fabricate a floating-membrane, which is
high thermal resistance. The thermoelectric materials are
polysilicon and aluminum. It is a spidery structure. The
investigation on thermoelectric effect analysis, calculation of
P,N type silicon seebeck voltage and structure design wewe
performed. During floating-membrane forming, the thermal
stress, which could be compensated by sandwitch structure
(Nitride/Oxide /Nitride). To measure stress and enhance
structure is the goal of future fabrication.
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