| Summary: | 碩士 === 國立成功大學 === 電機工程研究所 === 83 === For the buffer layers of (HgCd)Te grown on GaAs, the epilayer
were grown on GaAs (100) substrate by the pyrolysis of (DMCd),
diethylzinc (DEZn) and diisopropytellurium (DIPTe), at
temperature from 350 to 380 C. To achieve the excelent
epilayer, we varied the VI/IIly ratio from 1 to 2, and changed
the system pressure from 500 to The surface morphology and
layer thickness of the epitaxial observed by optical
microscope. The optimum growth conditions from
photoluminescense. The orientations of epitaxial layers CdTe
were studied by X-ray diffraction (XRD) and the compositions of
films were determined by energy dispersive X-ray (EDX) and AES
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