OMVPE Growth and Characteristics of (CdZn)Te on GaAs(100)
碩士 === 國立成功大學 === 電機工程研究所 === 83 === For the buffer layers of (HgCd)Te grown on GaAs, the epilayer were grown on GaAs (100) substrate by the pyrolysis of (DMCd), diethylzinc (DEZn) and diisopropytellurium (DIPTe), at temperature from 350...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/82900044613148282130 |