Studies of Heterodinuclear Compounds as Precursors for Chemical Vapor Deposition)

• Main Author: 孫效文
• Other Authors: 吉凱明
• Format: Others
• Language: zh-TW
• Published: 1995
• Online Access: http://ndltd.ncl.edu.tw/handle/48540599460868450412

碩士 === 國立中正大學 === 化學學系 === 83 === Two series of organometallic compounds were used as single source precursors for deposition of metal alloys by low pressure chemical vapor depsition over the temperature range 200-400℃. Thin films were deposited from two metalla-β-diketonate compounds Al[(CH3CO)2Mn(CO)4]3 and Al[(CH3CO)2Re(CO)4]3. However, XRD, EDS and AA analyses showed that these films were consisted of metal and metal oxide mixtures. Using compounds containing transition metal-tin bond as precursors for chemical vapor deposition could deposit metal alloy thin films. MnSn2 thin films were obtained from decomposition of Ph3SnMn(CO)5 at 300℃. Mn/Sn ratio characterized by EDS and AA were near 1/2 and deposition rate was 1.4μm/h. CoSn alloy films were obtained by cold wall CVD process with Ph3SnCo(CO)4 and Me3SnCo(CO)4 at temperature range 250-300℃. SAM, EDS, XRD and AA analyses revealed that these films were polycrystalline alloy with small amount of carbon and oxygen impurity. The deposition rates were 2-8μm/h.