Studies of Heterodinuclear Compounds as Precursors for Chemical Vapor Deposition)
碩士 === 國立中正大學 === 化學學系 === 83 === Two series of organometallic compounds were used as single source precursors for deposition of metal alloys by low pressure chemical vapor depsition over the temperature range 200-400℃. Thin films were deposited from two metalla-β-diketonate compounds Al[(C...
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| Format: | Others |
| Language: | zh-TW |
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1995
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| Online Access: | http://ndltd.ncl.edu.tw/handle/48540599460868450412 |