| Summary: | 碩士 === 國立中山大學 === 電機工程研究所 === 82 === In this work, we study the flow-rate modulation epitaxy (FM E)
effects on the crystal quality of GaAs/Si structures grown by
metalorganic chemical vapor deposition (MOCVD). The
electrical and optical properties of as-grown
heteroepilayers will be described as functions of the
GaAs growth time, growth temperature, the TEGa and AsH3
flow rate, and clock mode. We successfully obtain single
crystal and mirror-like surface. 77 K photoluminescene (PL)
full width at half maximum (FWHM) 7.0 meV and electron
mobility 1190 cm2 /V*sec can be obtained for 1 um- thick
epilayer of GaAs/Si. We compare FME with conventional
MOCVD. It has been shown that such a heterostructure makes
it possible to combine the advantages of both GaAs and Si
materials providing potential applications in high speed
and optical devices.
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