Flow-Rate Modulation Heteroepitaxy of GaAs on Si by MOCVD

碩士 === 國立中山大學 === 電機工程研究所 === 82 === In this work, we study the flow-rate modulation epitaxy (FM E) effects on the crystal quality of GaAs/Si structures grown by metalorganic chemical vapor deposition (MOCVD). The electrical and optical...

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Bibliographic Details
Main Authors: Hwang, Chong Zern, 黃仲仁
Other Authors: Lee, Ming Kwei
Format: Others
Language:zh-TW
Published: 1994
Online Access:http://ndltd.ncl.edu.tw/handle/08610529773963201864