Two-Dimensional HEMT Device Simulation by Transient Method
碩士 === 國立中山大學 === 電機工程研究所 === 82 === In this thesis,we employ a model consisting of Poisson equation, Schrodinger equation and continuity equation to simul- ate HEMT. This model consider the current across heterojunction and the current thr...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88826768041258512741 |
| Summary: | 碩士 === 國立中山大學 === 電機工程研究所 === 82 === In this thesis,we employ a model consisting of Poisson equation,
Schrodinger equation and continuity equation to simul- ate HEMT.
This model consider the current across heterojunction and the
current througt AlGaAs region. We simulate this device by using
transient method.The benefit of transient method was the
ability of extracting para- meters at any time.We focus on the
results of static state. Finally,the converge region of our
method is improved. The result proved that the current across
heterojunction and the current througt AlGaAs region play a
important role of the current component.
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