Two-Dimensional HEMT Device Simulation by Transient Method
碩士 === 國立中山大學 === 電機工程研究所 === 82 === In this thesis,we employ a model consisting of Poisson equation, Schrodinger equation and continuity equation to simul- ate HEMT. This model consider the current across heterojunction and the current thr...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88826768041258512741 |