Study of the technology of thin film transistors for SRAM''s
碩士 === 國立交通大學 === 電子研究所 === 82 === It has been found that pure RTA treatment has the potential to replace the furnace annealing for the method of recrystallization of the amorphous silicon, and that the hydrogenation plasma produced by TCP could more effe...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/74862849343975024499 |