Growth of Silicon Carbide Thin Films from Tris(trimethylsilyl) silane by Low Pressure Chemical Vapor Deposition
碩士 === 國立交通大學 === 應用化學系 === 82 === Tris(trimethylsilyl)methylsilane was used as a single sou- cursor for depositing beta-SiC thin films low pressure chemical vapor deposition. Deposition of uniform on Si (111) substrate was carried out at t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/79073003574729002996 |