Study of Locking Threshold in Actively Mode Locked Semiconductor

• Main Authors: Jyh-Jia Jean, 簡志嘉
• Other Authors: Yao-Haung Kao
• Format: Others
• Language: zh-TW
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/13252408841609636084

碩士 === 國立交通大學 === 電信研究所 === 82 === The locking behavior of actively mode-locked laser diode were intensively investigated by partial-integration method, which was derived from traveling-wave rate equations. The dependence of locking threshold on the modulation frequency, finite reflectivity on AR-coated facet, bias current, and modulation amplitude were examined. The lower the finite reflectivity was, the more shorter the pulse was. And the multiple pulses were observed as the driving frequency was close to the external cavity frequency. The pulse width was to some extent insensitive to the controlling factors for high reflectivity case. The behavior of above features were able to be clarfied by the dynamic detuning caused from phase difference between pulse peak and gain peak.