Study of Locking Threshold in Actively Mode Locked Semiconductor
碩士 === 國立交通大學 === 電信研究所 === 82 === The locking behavior of actively mode-locked laser diode were intensively investigated by partial-integration method, which was derived from traveling-wave rate equations. The dependence of locking thresho...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13252408841609636084 |