| Summary: | 碩士 === 國立交通大學 === 電信研究所 === 82 === The locking behavior of actively mode-locked laser diode were
intensively investigated by partial-integration method, which
was derived from traveling-wave rate equations. The dependence
of locking threshold on the modulation frequency, finite
reflectivity on AR-coated facet, bias current, and modulation
amplitude were examined. The lower the finite reflectivity was,
the more shorter the pulse was. And the multiple pulses were
observed as the driving frequency was close to the external
cavity frequency. The pulse width was to some extent
insensitive to the controlling factors for high reflectivity
case. The behavior of above features were able to be clarfied
by the dynamic detuning caused from phase difference between
pulse peak and gain peak.
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