The Behavior of Bilateral Latch-Up Triggering in VLSI CMOS Protection Circuits

博士 === 國立交通大學 === 電子研究所 === 82 === The results of serial studies on the behavior of bilateral latch-up in CMOS protection circuits are presented. Latch-up and ESD problems are two major factors that degrade VLSI pro- duct reliability. A new latch-up pheno...

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Bibliographic Details
Main Authors: Heng-Sheng Huang, 黃恆盛
Other Authors: C. Y. Chang
Format: Others
Language:en_US
Published: 1993
Online Access:http://ndltd.ncl.edu.tw/handle/29247230366336779482