Numerical Analyses of the Sidegating Effect in GaAs MESFET''s

博士 === 國立交通大學 === 電子研究所 === 82 === Two-dimensional numerical analyses (both transient and steady state) of the sidegating effect in GaAs MESFET''s have been performed for the first time with a realistic configuration. The results show that hole...

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Bibliographic Details
Main Authors: Shwu-Jing Chang, 張淑淨
Other Authors: Chien-Ping Lee
Format: Others
Language:en_US
Published: 1993
Online Access:http://ndltd.ncl.edu.tw/handle/99617874165928612708