Numerical Analyses of the Sidegating Effect in GaAs MESFET''s
博士 === 國立交通大學 === 電子研究所 === 82 === Two-dimensional numerical analyses (both transient and steady state) of the sidegating effect in GaAs MESFET''s have been performed for the first time with a realistic configuration. The results show that hole...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
1993
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Online Access: | http://ndltd.ncl.edu.tw/handle/99617874165928612708 |