Rapid Thermal Oxidation of Silicon in N2O : Growth Kinetics and Device Applications

• Main Authors: Feng-Liang Yeh, 葉峰良
• Other Authors: C.Y. Chang, S.C. Sun
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/38396801081133990371

碩士 === 國立交通大學 === 電子研究所 === 82 === This thesis presents two major areas of research: chemical mecha- nical polishing and rapid thermal oxidation. Chemical mechanical polishing (CMP) recently has emerged as a new element in ultra large scale integrated (ULSI) process technology. In this study, we present extensive results on dielectric planarization using CMP. Results indicate that polising rates vary with different dielectrics. Key parameters in determining the polishing rate are down force pressure and platen rotation speed. Nitridation of SiO2 is becoming important as devive sizes are scaling down because its superior property against hot carrier trapping and resistance to boron penetration in the P+ polysilicon. Rapid thermal N2O and O2 oxidation have been carried out and growth kinetics have been established. The dependence of oxide growth on the temperature, pressure and time has been analyzed. Low pressure rapid thermal oxidation in O2 and N2O, to the best our knowledge, was reported for the first time. We also present the wafer orientation and doping concentration dependence of rapid thermal N2O oxidation. The degree of oxidation rate enhancement, its dependence on the wafer orientation, oxidant ambient, and oxidation temperature are presented.