| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === This thesis presents two major areas of research: chemical
mecha- nical polishing and rapid thermal oxidation. Chemical
mechanical polishing (CMP) recently has emerged as a new
element in ultra large scale integrated (ULSI) process
technology. In this study, we present extensive results on
dielectric planarization using CMP. Results indicate that
polising rates vary with different dielectrics. Key
parameters in determining the polishing rate are down force
pressure and platen rotation speed. Nitridation of SiO2 is
becoming important as devive sizes are scaling down because
its superior property against hot carrier trapping and
resistance to boron penetration in the P+ polysilicon.
Rapid thermal N2O and O2 oxidation have been carried out
and growth kinetics have been established. The dependence
of oxide growth on the temperature, pressure and time has
been analyzed. Low pressure rapid thermal oxidation in O2
and N2O, to the best our knowledge, was reported for the first
time. We also present the wafer orientation and doping
concentration dependence of rapid thermal N2O oxidation. The
degree of oxidation rate enhancement, its dependence on the
wafer orientation, oxidant ambient, and oxidation temperature
are presented.
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