| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === Siocon-On-Insulator (SOI) technology is the most promising
method to slove the problems of radiation-hardness and latch-up
effects. We had successfully accompilished the SOI substrate by
using silicon direct bonding (SDB) technology. There are
several key points to achieve the desired SOI substrate by
using SDB technology, including bonding technology, thinning
technology and island-etching technology. In times past , we
had successfully demonstrated the bonding qualities of bond-
ing qualities of bonding interface trap density (Dit), leakage
current and breakdown voltage were as good as that of thermally
grown SiO2. In this thesis, we have been investigated how to
thin the bonded wafers to a desirable thickness and then what
the qualities of the thinned SOI layer are. Finally but most
importantly, we have successfully fabrica- ted the MOSFET on
the thinned and island-etched SOI layer, and then we
investigated some characteristics of this transistor. As a
result, we confirmed the electrical characteristics of the SOI-
MOSFET is better than the conventional one.
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