Investigation of Silicon-Directly-Bonded SOI Substrate and MOSFET Device
碩士 === 國立交通大學 === 電子研究所 === 82 === Siocon-On-Insulator (SOI) technology is the most promising method to slove the problems of radiation-hardness and latch-up effects. We had successfully accompilished the SOI substrate by using silicon dire...
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| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38170215116200598826 |