Reactive Ion Etching of GaAs, InP and InGaP with BCl3/SF6/Ar Mixtures
碩士 === 國立交通大學 === 電子研究所 === 82 === In this thesis, the investigation of Reactive Ion Etching ( RIE ) of GaAs, InP and InGaP with BCl3/SF6/Ar mixtures is reported. The etch rate was measured in order to find the dependence on RF power densit...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/23484652594160180713 |