A study of the Rapid Thermal Chemical Vapor Deposition for Applications in Integrated Circuits
碩士 === 國立交通大學 === 電子研究所 === 82 === In this work, the characteristics of rapid thermal chemical vapor deposition of undoped polysilicon have been studied. The effects of deposition temperature, pressure and reaction gas flow rate on the uni...
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/14429528451083535212 |
| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 82 === In this work, the characteristics of rapid thermal chemical
vapor deposition of undoped polysilicon have been studied. The
effects of deposition temperature, pressure and reaction gas
flow rate on the uniformity of polysilicon films are presented
in details. Nitrogen-doped polysilicon prepared by RTCVD was
investigated to the best of our knowldge, for the first time.
SIMS was used to examine nitrogen concentration in the RTCVD
polysilicon. The deposition rate and incubation time are
strong functions of nitrogen concentration. Nitrogen-doped
polysilicon layer has shown to be an excellent boron peneration
barrier for P+ polysilicon gate, base on the MOS capacitor
electrical data and SIMS boron profiles. A NICER (Nitrogen
Incorporation into CMOS Gate Electrode by RTCVD) technology
using nitrogen-doped RTCVD polysilicon and N2O gate dielectrics
is described as the potential candidate for the next generation
deep submicron CMOS process. This new process is ideal for the
future cluster-type equipment.
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