A study of the Rapid Thermal Chemical Vapor Deposition for Applications in Integrated Circuits

碩士 === 國立交通大學 === 電子研究所 === 82 === In this work, the characteristics of rapid thermal chemical vapor deposition of undoped polysilicon have been studied. The effects of deposition temperature, pressure and reaction gas flow rate on the uni...

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Bibliographic Details
Main Authors: Lin-Sung Wang, 王琳松
Other Authors: S.C. SUN
Format: Others
Language:en_US
Published: 1994
Online Access:http://ndltd.ncl.edu.tw/handle/14429528451083535212