Deep Level Transient Spectroscopy Measurement of ZnO varistor and AlGaAs
碩士 === 國立交通大學 === 電子物理學系 === 82 === existence of defects is unavoidable in all semiconductorrials. Most defects are formed due to impurities or crystalrfections. Defects are important to device characteristicsuse they affect material optica...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/37654182870048535859 |