| Summary: | 碩士 === 國立交通大學 === 材料科學(工程)研究所 === 82 === The phosphours wt% of APCVD PSG, which is used as the
passivation-1, and the exposure time in air after deposition
could make a great influence on stress-induced metal voiding
of Al-1%Si lines after alloy. The water absorption in APCVD
PSG film gives rise to a compressive stress . The APCVD PSG
with 4wt% phosphours content has the most stress change from
tension to compression during storage in air . This stress
change will induce the metal viods on Al-1%Si lines. Further-
more, the passivation local convex bending surrounding the
metal line is observed for the APCVD PSG containing lower
phosphours after alloy. The X-ray diffraction shows the Al-
1% Si film release its strain by metal voiding. The stress
change and local convex bending of the APCVD PSG film could
explain why the passivation induces the metal voids on Al-1%
Si line after alloy. If Al-1%Si is replaced by Al-1%Si-0.5%
Cu, the metal voids are inhibited . It is because the Al-1%
Si-0.5%Cu film has more resistance to stress-induced metal
voiding.On the other hand,to shorten the exposure time to air
or to store in dry N2 ambient after APCVD PSG deposition can
reduced the stress-induced metal voiding.
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