Study on the Failure Analysis of the Interconnection in VLSI Circuits
碩士 === 國立交通大學 === 材料科學(工程)研究所 === 82 === The phosphours wt% of APCVD PSG, which is used as the passivation-1, and the exposure time in air after deposition could make a great influence on stress-induced metal voiding of Al-1%Si lines...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97580400039506792408 |