The Study of Compound Semiconductor Materials Grown by Using Organic-arsine and Organic-phosphine Sources

• Main Authors: Wen-Jenq Tzou, 鄒文正
• Other Authors: Yan-Kuin Su, Shoou-Jinn Chang
• Format: Others
• Language: en_US
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/06015545719100784500

碩士 === 國立成功大學 === 電機工程研究所 === 82 === In this thesis, I use the home-made MOCVD system and use tertiarybutylarsine (TBA), tertiarybutylphosphine (TBP) as the V source to grow the semiconductor materials including GaAs, InP and InGaAs. TBA and TBP have the characteristics of efficient pyrolysis and low toxicity than hydrides, so the growth of epilayers with lower V/III ratios and lower growth temperatures. In the thesis, the growth conditions, such as growth temperature, pressure and V/III ratio, are investigated detailedly. We expect to find the optimum growth conditions. The surface morphologies of epilayers were observed from Scanning Electron Micrography(SEM). The qualities of epilayers were examined from photoluminescence (PL), photoreflectance (PR), Raman Scattering and deep level transient spectroscopy (DLTS). InGaAs epilayers were grown on GaAs(100) substrates, the indium solid composition determined from x-ray diffraction measurement. GaAs/InGaAs strained quantum well were grown on GaAs(100) substrates, the transition energies of quantum well were investigated from PL spectra. TBA and TBP are the most promising sources to replace the high toxic hydrides. We shall devote to the study of TBA and TBP, and expect to become the basis of the research of semi- conductor device.