A Study on GaAs Negative-Differential-Resistance Switching Devices

• Main Authors: Shiuh-Ren Yih, 易序人
• Other Authors: Wen-Chau Liu
• Format: Others
• Language: zh-TW
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/66937814582347273762

碩士 === 國立成功大學 === 電機工程研究所 === 82 === In the thesis, we make a series of studies on delta- doped GaAs quantum-well negative-differential-resistance switching devices prepared by MBE technology . According to the carrier confinement effects produced in the carrier transports of all studied devices, we operate in coordination with the variant delta-doped quantum-well structures to produce the N-type or S- type negative- differential-resistance of I-V characteristic . In a series of describing variant structures, we change some parameters properly to realize the variation of its corresponding characteristic, and make some studies about theoretical analysis and experiments . At the end, we hope that we could develop a device in applied to the logical circuit having multiple-value state .