A Study on GaAs Negative-Differential-Resistance Switching Devices
碩士 === 國立成功大學 === 電機工程研究所 === 82 === In the thesis, we make a series of studies on delta- doped GaAs quantum-well negative-differential-resistance switching devices prepared by MBE technology . According to the carrier confinement effects p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/66937814582347273762 |