Growth of Diamond Thin Film by Triode Hollow Cathode Discharge Plasma Chemical Vapor Deposition

• Main Authors: Ming-Cheng Yeh, 葉銘政
• Other Authors: Hor-Da Juang
• Format: Others
• Language: zh-TW
• Published: 1994
• Online Access: http://ndltd.ncl.edu.tw/handle/68095382454921696593

碩士 === 國立成功大學 === 化學工程研究所 === 82 === The Hollow Cathode Discharge Chemical Vapor Deposition system was first employed to grow diamond thin films in this thesis. However, the growth of diamond films was interfered by the high temperature operation of electrode and by the erosion of electrode in the presence of CHCl3. Therefore, based on the Hollow Cathode Discharge theory, we further designed and con- structed a new Hollow Cathode system to overcome these problems. A new diamond-film growth method with three electrodes has been developed. The first electrode operated at 2.5 to 3.0 Amp sustains a low voltage and high current Arc. The Second elec- trode operated at about 1 Amp sustains a high voltage and high current Glow Discharge. The third is used to control the current to the substrate and the distribution of plasma density. The re- sults indicate that electron can facilitate diamond growth sig- nificantly. Diamond films with good crystallinity can be achieved even at such a low pressure as 1 torr; We can further grow high crystallinity and high quality films at high con. of methane. In comparison with the growth rates of CH4 and CHCl3 , it''s observed that CHCl3 is faster than CH4. Moreover the improvement of metal pollution and the characteristics of this new system will be discussed in detail.