The Study of 6H-Silicon Carbide Epitaxy Process
碩士 === 中原大學 === 應用物理學系 === 82 === According to the physical and electronic properties, the slilcon carbide compound semiconductor has more potential than usual semiconductor materials. It as a wide band gap semiconductor material is of grea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77405810337462769911 |