Multislice Liquid Phase Epitaxial Growth of GaP:N Yellow-Green Light Emitting Diodes
碩士 === 中原大學 === 電子工程學系 === 82 === The GaP:N epitaxial wafer is the material for fabricating GaP: N yellow-green light emitting diodes. The p-n junction on n- GaP:S substrate is formed by horizontal liquid phase epitaxy ,vapor-phase doping...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
1994
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58812086868479154354 |