| Summary: | 碩士 === 大同工學院 === 材料科學(工程)研究所 === 81 === The sputtering deposition process of TiNi alloy thin films via
a R.F. magnetron sputter were studied. The as-deposited films
were amorphous in structure and did not exhibit shape memory
alloy characteristics. The amorphous films were vacuum annealed
to give the crystal structure and shape memory proper- ties.
Effect of deposition time, argon pressure, argon purity,
sputtering power, substrate temperature and annealing tempera
ture and time on the growth rate and properties of TiNi alloy
thin films were evaluated. The crystal structure transitions of
the annealed films were studied using a x-ray diffractometer.
The transformation characteristics of the TiNi alloy thin films
were examined using conventional four-probe electrical resis-
tance measurements. Compositions of the coated films were
analyzed using EDS. Results shows that the forward power of
sputter , substrate temperature and the argon pressure signifi-
cantly affect the Ti to Ni ratio as well as the growth rate of
the TiNi alloy thin films.
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