Study of the retrograde-well CMOS Using High-energy Ion Implantation
碩士 === 國立交通大學 === 電子研究所 === 81 === The retrograde-well process using high energy ion implantation for CMOS technology has been proposed to instead of the conventional diffusion well. The high-energy ion implantation technology eliminates th...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1993
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/07690603680059596740 |