The Selective Epitaxy of Si Using N+ Ion Implantation
碩士 === 國立交通大學 === 電子研究所 === 81 === Selective epitaxial growth (SEG) of silicon using a dichloro- silane-hydrogen mixture in a low pressure chemical vapor deposition (LPCVD) hot-wall reactor is studied. Si epitaxy is carried out on (100),(11...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/99705801370280019815 |