Study of GaAs & AlGaAs Selective Etch Using Reactive Ion Etching
碩士 === 國立交通大學 === 材料科學(工程)研究所 === 81 === Reactive ion etch of GaAs and Al0.3Ga0.7As using BCl3 (boron trichloride) and SF6 (sulfur hexafluoride) gas mixture is described , and compared with the results using SiCl4 (silicon tetrachlori...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/45255702708274432336 |