Thermal stress analysis of bulk single crystal during Czochralski growth
碩士 === 國立成功大學 === 機械工程研究所 === 81 === Most of Single crystals is produced by the Czochralski(cz) procress. The dislocations are frist introduced during the Czochralski growth of GaAs that is crystallographic glid caused by the excessive thermal stres...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38663276210331986615 |