The Study of Real-Space Transfer Devices
碩士 === 國立成功大學 === 電機工程研究所 === 81 === Channel electron of real-space transfer device is heated by drain-to-source field to become hot electron, which are injected into substrate, controlled by substrate voltage. Negative differential resista...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1993
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/50611586330367964649 |