Shallow junction formation using implantation of BF2 ions through poly-Si film
碩士 === 國立交通大學 === 電子研究所 === 78 ===
Main Authors: | ZHAN,SHANG-TANG, 詹尚堂 |
---|---|
Other Authors: | ZHENG,HUANG-ZHONG |
Format: | Others |
Language: | zh-TW |
Published: |
1991
|
Online Access: | http://ndltd.ncl.edu.tw/handle/22782544989860662694 |
Similar Items
-
Formation of NiSi Contacted Shallow Junction Diodes by Implant Through Silicide or Metal
by: Chia-Hong Cheng, et al.
Published: (2001) -
A Study of Sheet Resistance Uniformity in Ion-Implanted 12 inch Si Shallow Junction
by: C.H. Chen, et al.
Published: (2012) -
Relibility of the Electrical Properties of the BF2+ Ion Implanted Diamond Film
by: Lee,Shing Long, et al.
Published: (1993) -
Formation of the Shallow Junctions by the Implantation-Through- Polysilicon Technique
by: Chi-Hung Chao, et al.
Published: (1994) -
The study of titanium-polycided shallow junctions formed by outdiffusion of BF﹢/As﹢ from polycrystalline/amorphous silicon
by: Huang, Zheng-Tong, et al.