Analytical Modelling of Carrier Depletion Silicon-on-insulator Optical Modulation Diodes
We derive an analytical model for the depletion capacitance of silicon-on-insulator (SOI) optical modulation diodes. This model accurately describes the parasitic fringe capacitances due to a lateral pn junction and can be extended to other geometries, such as vertical and interleaved junctions. Ana...
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| Language: | en_ca |
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2013
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| Online Access: | http://hdl.handle.net/1807/42970 |