Surface Passivation of Crystalline Silicon by Dual Layer Amorphous Silicon Films
The probability of recombination of photogenerated electron hole pairs in crystalline silicon is governed by the density of surface defect states and the density of charge carriers. Depositions of intrinsic hydrogenated amorphous silicon (a-Si:H) in dc saddle field (DCSF) PECVD system and hydrogenat...
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| Language: | en_ca |
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2011
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| Online Access: | http://hdl.handle.net/1807/29630 |