Surface Passivation of Crystalline Silicon by Dual Layer Amorphous Silicon Films

Surface Passivation of Crystalline Silicon by Dual Layer Amorphous Silicon Films

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The probability of recombination of photogenerated electron hole pairs in crystalline silicon is governed by the density of surface defect states and the density of charge carriers. Depositions of intrinsic hydrogenated amorphous silicon (a-Si:H) in dc saddle field (DCSF) PECVD system and hydrogenat...

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Bibliographic Details
Main Author: Stepanov, Dmitri
Other Authors: Kherani, Nazir P.
Language:en_ca
Published: 2011
Subjects:
surface passivation
amorphous silicon
silicon nitride
high efficiency solar cell
Online Access:http://hdl.handle.net/1807/29630

Internet

http://hdl.handle.net/1807/29630

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