Electronic structure and optical properties of III-N nanowires
The term III-N nanowire (NW) will refer throughout this work to the free-standing nanowires made of group-III-nitrides semiconductors, namely InN, GaN and AlN. These nanostructures have a large length/diameter ratio, of the order of 100 (sev- eral micrometers versus tenths of nanometers). The term f...
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| Format: | Doctoral Thesis |
| Language: | English |
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Universitat de València
2011
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| Online Access: | http://hdl.handle.net/10803/58722 http://nbn-resolving.de/urn:isbn:9788437080727 |