Resistive Switching and Memory effects in Silicon Oxide Based Nanostructures
Silicon oxide (SiO x 1 ∠ x [∠, double =]2) has long been used and considered as a passive and insulating component in the construction of electronic devices. In contrast, here the active role of SiO x in constructing a type of resistive switching memory is studied. From electrode-independent electri...
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| Format: | Others |
| Language: | English |
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2013
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| Online Access: | http://hdl.handle.net/1911/70503 |