Development of embedded atom method interatomic potentials for Ge-Sn-Si ternary and constituent binary alloys for modeling material crystallization

Development of embedded atom method interatomic potentials for Ge-Sn-Si ternary and constituent binary alloys for modeling material crystallization

Bibliographic Details
Main Author: Acharya, Sudip
Language:English
Published: Wright State University / OhioLINK 2020
Subjects:
Physics
nanoelectronics
optoelectronics
Group IV alloys
bandgap
Ge-Sn-Si
embedded atom method
EAM
EAM potential
epitaxial growth
molecular dynamics
material crystallization
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=wright1598820359123203

Internet

http://rave.ohiolink.edu/etdc/view?acc_num=wright1598820359123203

Similar Items