Study of Parasitic Barriers in SiGe HBTs Due to P-n Junction Displacement and Bias Effects

Study of Parasitic Barriers in SiGe HBTs Due to P-n Junction Displacement and Bias Effects

Bibliographic Details
Main Author: Mathur, Nitish
Language:English
Published: University of Cincinnati / OhioLINK 2001
Subjects:
device physics
SiFe HBTs
SiGe HBT transistor performance
Parasitic barrier
Boron Outdiffusion
Non-alignment of P-n Junction and Heterojunctions
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin997446626

Internet

http://rave.ohiolink.edu/etdc/view?acc_num=ucin997446626

Similar Items