Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Bibliographic Details
Main Author:	Manjunath, Vishal Jain
Language:	English
Published:	University of Cincinnati / OhioLINK 2019
Subjects:	Electrical Engineering Resistive Random Access Memory Aluminum Interfacial layer Top Electrode Niobium oxide Gibbs Free Energy
Online Access:	http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

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