Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Effect Of Interfacial Top Electrode Layer On The Performance Of Niobium Oxide Based Resistive Random Access Memory

Bibliographic Details
Main Author: Manjunath, Vishal Jain
Language:English
Published: University of Cincinnati / OhioLINK 2019
Subjects:
Electrical Engineering
Resistive Random Access Memory
Aluminum
Interfacial layer
Top Electrode
Niobium oxide
Gibbs Free Energy
Online Access:http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

Internet

http://rave.ohiolink.edu/etdc/view?acc_num=ucin1552657250617694

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